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description the auirf7665s2 combines the latest automotive hexfet? power mosfet silicon technology with the advanced directfet packaging platform to produce a best in class part for automotive class d audio amplifier applications. the directfet package is compatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection solderin g techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maximize thermal transfer in automotive power systems. this hexfet power mosfet optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key class d audio amplifier performance factors such as efficiency, thd and emi. moreover the directfet packaging platform offers low paras itic inductance and resistance when compared to conventional wire bonded soic packages which improves emi performance by reducing th e voltage ringing that accompanies current transients. these features combine to make this mosfet a highly desirable component in automotive class d audio amplifier systems. www.irf.com 1 09/03/10 AUIRF7665S2TR AUIRF7665S2TR1 applicable directfet outline and substrate outline directfet power mosfet automotive grade directfet isometric hexfet ? is a registered trademark of international rectifier. ? advanced process technology ? optimized for class d audio amplifier applications ? low rds(on) for improved efficiency ? low qg for better thd and improved efficiency ? low qrr for better thd and lower emi ? low parasitic inductance for reduced ringing and lower emi ? delivers up to 100w per channel into 8w with no heatsink ? dual sided cooling ? 175c operating temperature ? repetitive avalanche capability for robustness and reliability ? lead free, rohs and halogen free sb sc m2 m4 l4 l6 l8 v (br)dss 100v r ds(on) typ. 51m max. 62m r g (typical) 3.5 q g (typical) 8.3nc pd - 96286b absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation p d @t a = 25c power dissipation e as single pulse avalanche energy (thermally limited) e as(tested) single pulse avalanche energy (tested value) i ar avalanche current a e ar repetitive avalanche energy mj t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient CCC 63 r ja junction-to-ambient 12.5 CCC r ja junction-to-ambient 20 CCC r j-can junction-to-can CCC 5.0 r j-pcb junction-to-pcb mounted 1.4 CCC linear deratin g factor w/c 30 max. 10.2 7758 100 20 14.4 4.1 -55 to + 175 0.2 2.4 37 see fig. 18a,18b,16,17 56 270 c/w va w c mj downloaded from: http:///

2 www.irf.com surface mounted on 1 in. square cu (still air).
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with smallclip heatsink (still air) notes through are on page 11 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 100 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.10 CCC v/c r ds(on) static drain-to-source on-resistance CCC 51 62 m v gs(th) gate threshold voltage 3.0 4.0 5.0 v ? v gs(th) / ? t j gate threshold voltage coefficient CCC -13 CCC mv/c gfs forward transconductance 8.8 CCC CCC s r g(int) internal gate resistance CCC 3.5 5.0 i dss drain-to-source leakage current CCC CCC 5 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 dynamic @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC 8.3 13 v ds = 50v q gs1 pre-vth gate-to-source charge CCC 1.9 CCC v gs = 10v q gs2 post-vth gate-to-source charge CCC 0.77 CCC i d = 8.9a q gd gate-to-drain charge CCC 3.2 CCC see fig. 11 q godr gate charge overdrive CCC 2.4 CCC q sw switch charge (q gs2 + q gd ) CCC 4.0 CCC q oss output charge CCC 4.7 CCC nc t d(on) turn-on delay time CCC 3.8 CCC t r rise time CCC 6.4 CCC t d(off) turn-off delay time CCC 7.1 CCC ns t f fall time CCC 3.6 CCC c iss input capacitance CCC 515 CCC c oss output capacitance CCC 110 CCC c rss reverse transfer capacitance CCC 30 CCC pf c oss output capacitance CCC 530 CCC c oss output capacitance CCC 70 CCC c oss eff. effective output capacitance CCC 115 CCC diode characteristics parameter min. typ. max. units i s continuous source current (body diode) a i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t r r reverse recovery time CCC 33 CCC ns q r r reverse recovery charge CCC 38 CCC nc CCC CCC 14.4 58 CCC CCC v gs = 20v conditions v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 80v, ? = 1.0mhz v gs = 0v v ds = 25v ? = 1.0mhz v gs = 0v, v ds = 0v to 80v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 8.9a nc t j = 25c, i s = 8.9a, v gs = 0v t j = 25c, i f = 8.9a, v dd = 25v di/dt = 100a/s mosfet symbol showing the integral reverse p-n junction diode. conditions v gs = 10v r g = 6.8 v gs = -20v v ds = v gs , i d = 25a v ds = 16v, v gs = 0v v ds = 100v, v gs = 0v v ds = 80v, v gs = 0v, t j = 125c v ds = 25v, i d = 8.9a v dd = 50v i d = 8.9a downloaded from: http:///

www.irf.com 3 qualification standards can be found at international rectifiers web site: http://www.irf.com exceptions to aec-q101 requirements are noted in the qualification report. qualification information ? dfet2 msl1 rohs compliant yes esd machine model class b aec-q101-002 human body model class 2 aec-q101-001 charged device model class iv aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. downloaded from: http:///

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical on-resistance vs. gate voltage fig 4. typical on-resistance vs. drain current fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 60s pulse width tj = 25c 5.0v 2 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = -40c tj = 25c tj = 175c v ds = 25v 60s pulse width 0 10 20 30 40 i d , drain current (a) 40 80 120 160 200 240 280 320 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 10v t j = 25c t j = 125c 6 7 8 9 10 11 12 13 14 15 v gs, gate -to -source voltage (v) 40 60 80 100 120 140 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 8.9a t j = 25c t j = 125c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.9a v gs = 10v downloaded from: http:///

www.irf.com 5 fig 7. typical threshold voltage vs. junction temperature fig 8. typical source-drain diode forward voltage fig 9. typical forward transconductance vs. drain current fig 10. typical capacitance vs.drain-to-source voltage fig.11 typical gate charge vs.gate-to-source voltage fig 12. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.5 3.5 4.5 5.5 6.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a id = 250a id = 1.0ma d = 1.0a 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = -40c tj = 25c tj = 175c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 024681 01 2 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v vds= 20v i d = 8.9a 25 50 75 100 125 150 175 t c , case temperature (c) 0 2 4 6 8 10 12 14 16 i d , d r a i n c u r r e n t ( a ) 0 2 4 6 8 10 12 14 16 18 i d ,drain-to-source current (a) 0 2 4 6 8 10 12 14 16 18 20 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380s pulse width downloaded from: http:///

6 www.irf.com fig 14. maximum avalanche energy vs. temperature fig 13. maximum safe operating area fig 15. maximum effective transient thermal impedance, junction-to-case fig 16. typical avalanche current vs.pulsewidth 0 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec dc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.64a 3.04a bottom 8.90a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.49687 0.0001190.00517 8.231486 2.55852 0.018926 1.94004 0.002741 downloaded from: http:///

www.irf.com 7 fig 17. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 16, 17:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 18a, 18b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 16, 17). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as fig 19a. gate charge test circuit fig 19b. gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f fig 20a. switching time test circuit fig 20b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l s 20k
1 0.1 % + - 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 5 10 15 20 25 30 35 40 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 8.9a downloaded from: http:///

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please see an-1035 for directfet assembly details and stencil and substrate design recommendations g = gate d = drain s = source d gs d dd cl downloaded from: http:///

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part marking

please see an-1035 for directfet assembly details and stencil and substrate design recommendations downloaded from: http:///

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tape & reel dimension (showing component orientation). downloaded from: http:///

www.irf.com 11 click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.944mh, r g = 25 , i as = 8.9a. pulse width 400s; duty cycle 2%. used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink.
r is measured at t j of approximately 90c. important notice unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any tim e and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive indus try and / or customer specific requirements with regards to product discontinuance and process change notification. all products ar e sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs s tandard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. exc ept where mandated by government requirements, testing of all parameters of each product is not necessarily performed.ir assumes no liability for applications assistance or customer product design. customers are responsible for their products an d applications using ir components. to minimize the risks with customer products and applications, customers should provide ad- equate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive businesspractice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the b ody, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, aff iliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet m ilitary specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in c onnection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements for technical support, please contact irs technical assistance center http://www .irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

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